Kavli Affiliate: David Charbonneau | First 5 Authors: Juliana García-Mejía, Zoë L. de Beurs, Patrick Tamburo, Andrew Vanderburg, David Charbonneau | Summary: We present a ground-based transit detection of HIP 41378 f, a long-period ($P = 542$ days), extremely low-density ($0.09 pm 0.02$ g cm$^{-3}$) giant exoplanet in a dynamically complex system. Using photometry from […]
Kavli Affiliate: Ronald Hanson | First 5 Authors: [#item_custom_name[1]], [#item_custom_name[2]], [#item_custom_name[3]], [#item_custom_name[4]], [#item_custom_name[5]] | Summary: An efficient interface between a spin qubit and single photons is a key enabling system for quantum science and technology. We report on a coherently controlled diamond nitrogen-vacancy center electron spin qubit that is optically interfaced with an open microcavity. […]
Kavli Affiliate: Ronald Hanson | First 5 Authors: [#item_custom_name[1]], [#item_custom_name[2]], [#item_custom_name[3]], [#item_custom_name[4]], [#item_custom_name[5]] | Summary: Micrometer-scale thin diamond devices are key components for various quantum sensing and networking experiments, including the integration of color centers into optical microcavities. In this work, we introduce a laser-cutting method for patterning microdevices from millimeter-sized diamond membranes. The method […]
Kavli Affiliate: Kristin A. Persson | First 5 Authors: Sinéad M. Griffin, Sinéad M. Griffin, , , | Summary: We perform the first high-throughput search and evaluation of materials that can serve as excellent low-mass dark matter detectors. Using properties of close to one thousand materials from the Materials Project database, we project the sensitivity […]
Kavli Affiliate: Austin J. Minnich | First 5 Authors: Mete M. Bayrak, Mete M. Bayrak, , , | Summary: The high frequency performance and yield of III-V semiconductor devices such as InP HEMTs is negatively impacted by subsurface etch damage and non-uniform etch depth over the wafer. Atomic layer etching (ALE) has the potential to […]
Kavli Affiliate: Viatcheslav V. Dobrovitski | First 5 Authors: [#item_custom_name[1]], [#item_custom_name[2]], [#item_custom_name[3]], [#item_custom_name[4]], [#item_custom_name[5]] | Summary: Shuttling of spin qubits between different locations is a key element in many prospective semiconductor systems for quantum information processing, but the shuttled qubits should be protected from decoherence created by time- and space-dependent noises. Since the paths of […]
Kavli Affiliate: Tim H. Taminiau | First 5 Authors: Abigail N. Poteshman, Abigail N. Poteshman, , , | Summary: High-throughput characterization often requires estimating parameters and model dimension from experimental data of limited quantity and quality. Such data may result in an ill-posed inverse problem, where multiple sets of parameters and model dimensions are consistent […]
Kavli Affiliate: Kristin A. Persson | First 5 Authors: Haiwen Dai, Haiwen Dai, , , | Summary: Data-driven methodologies hold the promise of revolutionizing inorganic materials discovery, but they often face challenges due to discrepancies between theoretical predictions and experimental validation. In this work, we present an end-to-end discovery framework that leverages synthesizability, oxidation state […]
Kavli Affiliate: Oskar Painter | First 5 Authors: Neha Mahuli, Neha Mahuli, , , | Summary: We present a dry surface treatment combining atomic layer etching and deposition (ALE and ALD) to mitigate dielectric loss in fully fabricated superconducting quantum devices formed from aluminum thin films on silicon. The treatment, performed as a final processing […]
Kavli Affiliate: Grace Xing | First 5 Authors: Eungkyun Kim, Eungkyun Kim, , , | Summary: AlN has the largest bandgap in the wurtzite III-nitride semiconductor family, making it an ideal barrier for a thin GaN channel to achieve strong carrier confinement in field-effect transistors, analogous to silicon-on-insulator technology. Unlike SiO$_2$/Si/SiO$_2$, AlN/GaN/AlN can be grown […]