Kavli Affiliate: David A. Muller | First 5 Authors: Shake Karapetyan, Shake Karapetyan, , , | Summary: To improve transistor density and electronic performance, next-generation semiconductor devices are adopting three-dimensional architectures and feature sizes down to the few-nm regime, which require atomic-scale metrology to identify and resolve performance-limiting fabrication challenges. X-ray methods deliver three-dimensional imaging […]
Continue.. 3D Atomic-Scale Metrology of Strain Relaxation and Roughness in Gate-All-Around (GAA) Transistors via Electron Ptychography