Kavli Affiliate: Austin Minnich | Summary:We report the on-wafer characterization of $S$-parameters and microwave noise temperature ($T_50$) of discrete metamorphic InGaAs high electron mobility transistors (mHEMTs) at 40 K and 300 K and over a range of drain-source voltages ($V_DS$). From these data, we extract a small-signal model and the drain (output) noise current power […]
Continue.. Experimental Investigation of Drain Noise in High Electron Mobility Transistors: Thermal and Hot Electron Noise