Kavli Affiliate: Austin J. Minnich | First 5 Authors: Bekari Gabritchidze, Kieran A. Cleary, Anthony C. Readhead, Austin J. Minnich, | Summary: We report the on-wafer characterization of $S$-parameters and microwave noise temperature ($T_{50}$) of discrete metamorphic InGaAs high electron mobility transistors (mHEMTs) at 40 K and 300 K and over a range of drain-source […]
Continue.. Experimental Investigation of Drain Noise in High Electron Mobility Transistors: Thermal and Hot Electron Noise