Kavli Affiliate: Austin Minnich | Summary:The InP high-electron-mobility transistor (HEMT) is indispensable for low-noise amplifiers (LNAs) in radio astronomy and quantum computing. The composition of the $mathrmIn_xGa_1-xAs$ channel in InP HEMT is known to influence the LNA noise performance. However, the various physical mechanisms responsible for noise generation are not fully characterized and understood. Here, […]
Continue.. On the $mathrmIn_xGa_1-xAs$ channel noise in InP HEMTs from 4 K to 300 K