Kavli Affiliate: Grace Xing | First 5 Authors: Eungkyun Kim, Eungkyun Kim, , , | Summary: AlN has the largest bandgap in the wurtzite III-nitride semiconductor family, making it an ideal barrier for a thin GaN channel to achieve strong carrier confinement in field-effect transistors, analogous to silicon-on-insulator technology. Unlike SiO$_2$/Si/SiO$_2$, AlN/GaN/AlN can be grown […]
Continue.. XHEMTs on Ultrawide Bandgap Single-Crystal AlN Substrates