Kavli Affiliate: Giordano Scappucci | First 5 Authors: Davide Costa, Lucas E. A. Stehouwer, Yi Huang, Sara Martí-Sánchez, Davide Degli Esposti | Summary: We investigate the disorder properties of two-dimensional hole gases in Ge/SiGe heterostructures grown on Ge wafers, using thick SiGe barriers to mitigate the influence of the semiconductor-dielectric interface. Across several heterostructure field […]
Continue.. Reducing disorder in Ge quantum wells by using thick SiGe barriers