Kavli Affiliate: Grace Xing | First 5 Authors: Joseph Casamento, Hyunjea Lee, Takuya Maeda, Ved Gund, Kazuki Nomoto | Summary: Epitaxial Sc$_x$Al$_{1-x}$N thin films of ~100 nm thickness grown on metal polar GaN exhibit significantly enhanced relative dielectric permittivity ($epsilon_r$) values relative to AlN. $epsilon_r$ values of ~17 to 21 for Sc contents of 17 […]
Continue.. Epitaxial Sc$_x$Al$_{1-x}$N on GaN is a High K Dielectric