Kavli Affiliate: Grace Xing | First 5 Authors: Shivali Agrawal, Len van Deurzen, Jimy Encomendero, Joseph E. Dill, Hsin Wei | Summary: Ultrawide bandgap heterojunction p-n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Current-voltage characteristics show a turn on voltage of $V_{text{bi}}approx5.5$ V, a minimum […]
Continue.. Ultrawide bandgap semiconductor heterojunction p-n diodes with distributed polarization doped p-type AlGaN layers on bulk AlN substrates