Microscopic mechanisms of flexoelectricity in oxide membranes

Kavli Affiliate: Gregory D. Fuchs | First 5 Authors: Harikrishnan KP, Varun Harbola, Jaehong Choi, Kevin J. Crust, Yu-Tsun Shao | Summary: Modern electromechanical actuators and sensors rely on the piezoelectric effect that linearly couples strain and electric polarization. However, this effect is restricted to materials that lack inversion symmetry. In contrast, the flexoelectric effect […]


Continue.. Microscopic mechanisms of flexoelectricity in oxide membranes

Microscopic mechanisms of flexoelectricity in oxide membranes

Kavli Affiliate: Gregory D. Fuchs | First 5 Authors: Harikrishnan KP, Varun Harbola, Jaehong Choi, Kevin J. Crust, Yu-Tsun Shao | Summary: Modern electromechanical actuators and sensors rely on the piezoelectric effect that linearly couples strain and electric polarization. However, this effect is restricted to materials that lack inversion symmetry. In contrast, the flexoelectric effect […]


Continue.. Microscopic mechanisms of flexoelectricity in oxide membranes

Superconductivity in tin telluride films grown by molecular beam epitaxy

Kavli Affiliate: David A. Muller | First 5 Authors: Antonio Gonzalez, Samuel J. Poage, Bernardo Langa, Jr., Deepak Sapkota, Salva Salmani-Rezaie | Summary: The intersection of superconductivity and ferroelectricity hosts a wide range of exotic quantum phenomena. Here, we report on the observation of superconductivity in high-quality tin telluride films grown by molecular beam epitaxy. […]


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The effect of boron incorporation on leakage and wake-up in ferroelectric Al_{1-x}Sc_xN

Kavli Affiliate: Debdeep Jena | First 5 Authors: Maike Gremmel, Chandrashekhar Prakash Savant, Debaditya Bhattacharya, Georg Schönweger, Debdeep Jena | Summary: This study explores the influence of boron incorporation on the structural and electrical properties of ferroelectric Aluminum Scandium Nitride (Al_{1-x}Sc_xN ) thin films, focusing on leakage currents, wake-up effects, and imprint behavior. Al_{1-x}Sc_xN films […]


Continue.. The effect of boron incorporation on leakage and wake-up in ferroelectric Al_{1-x}Sc_xN

Improper Ferroelectricity at the Monolayer Limit

Kavli Affiliate: Darrell G. Schlom | First 5 Authors: Yilin Evan Li, Harikrishnan KP, Haidong Lu, Rachel A. Steinhardt, Megan E. Holtz | Summary: Ultrathin ferroelectric films with out-of-plane polarization and high Curie temperatures are key to miniaturizing electronic devices. Most ferroelectrics employed in devices are proper ferroelectrics, where spontaneous polarization is the primary order […]


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Surface-dominant transport in Weyl semimetal NbAs nanowires for next-generation interconnects

Kavli Affiliate: Zhiting Tian | First 5 Authors: Yeryun Cheon, Mehrdad T. Kiani, Yi-Hsin Tu, Sushant Kumar, Nghiep Khoan Duong | Summary: Ongoing demands for smaller and more energy efficient electronic devices necessitate alternative interconnect materials with lower electrical resistivity at reduced dimensions. Despite the emergence of many promising candidates, synthesizing high quality nanostructures remains […]


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Visualizing the breakdown of the quantum anomalous Hall effect

Kavli Affiliate: Katja C. Nowack | First 5 Authors: George M. Ferguson, Run Xiao, Anthony R. Richardella, Austin Kaczmarek, Nitin Samarth | Summary: The creation of topologically non-trivial matter across electronic, mechanical, cold-atom, and photonic platforms is advancing rapidly, yet understanding the breakdown of topological protection remains a major challenge. In this work, we use […]


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Epitaxial high-K AlBN barrier GaN HEMTs

Kavli Affiliate: Grace Xing | First 5 Authors: Chandrashekhar Savant, Thai-Son Nguyen, Kazuki Nomoto, Saurabh Vishwakarma, Siyuan Ma | Summary: We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize ultra-thin barrier AlBN/GaN high electron mobility transistors […]


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Growth and characterization of single crystal cubic TaN and hexagonal Ta$_2$N films on c-plane Sapphire

Kavli Affiliate: Grace Xing | First 5 Authors: Anand Ithepalli, Amit Rohan Rajapurohita, Arjan Singh, Rishabh Singh, John Wright | Summary: Two single crystal phases of tantalum nitride were stabilized on c-plane sapphire using molecular beam epitaxy. The phases were identified to be $delta$-TaN with a rocksalt cubic structure and $gamma$-Ta$_2$N with a hexagonal structure. […]


Continue.. Growth and characterization of single crystal cubic TaN and hexagonal Ta$_2$N films on c-plane Sapphire

From Documents to Dialogue: Building KG-RAG Enhanced AI Assistants

Kavli Affiliate: Dan Luo | First 5 Authors: Manisha Mukherjee, Sungchul Kim, Xiang Chen, Dan Luo, Tong Yu | Summary: The Adobe Experience Platform AI Assistant is a conversational tool that enables organizations to interact seamlessly with proprietary enterprise data through a chatbot. However, due to access restrictions, Large Language Models (LLMs) cannot retrieve these […]


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