Kavli Affiliate: Jia Liu | First 5 Authors: Ruijun Zhang, Mingkun Zhang, Guoliang Zhang, Yujian Chen, Jia Liu | Summary: A minority carrier lifetime of 25.46 $mu$s in a P-type 4H-SiC epilayer has been attained through sequential thermal oxidation and hydrogen annealing. Thermal oxidation can enhance the minority carrier lifetime in the 4H-SiC epilayer by […]
Continue.. Prolonging Carrier Lifetime in P-type 4H-SiC Epilayer by Thermal Oxidation and Hydrogen Annealing