Kavli Affiliate: Grace Xing | First 5 Authors: Eungkyun Kim, Yu-Hsin Chen, Naomi Pieczulewski, Jimy Encomendero, David Anthony Muller | Summary: AlN has the largest bandgap in the wurtzite III-nitride semiconductor family, making it an ideal barrier for a thin GaN channel to achieve strong carrier confinement in field-effect transistors, analogous to silicon-on-insulator technology. Unlike […]
Continue.. XHEMTs on Ultrawide Bandgap Single-Crystal AlN Substrates