Detecting, distinguishing, and spatiotemporally tracking photogenerated charge and heat at the nanoscale

Posted by klaurent Berkeley

Kavli Affiliate: Naomi S. Ginsberg | First 5 Authors: Hannah L. Weaver, Cora M. Went, Joeson Wong, Dipti Jasrasaria, Eran Rabani | Summary: Since dissipative processes are ubiquitous in semiconductors, characterizing how electronic and thermal energy transduce and transport at the nanoscale is vital for understanding and leveraging their fundamental properties. For example, in low-dimensional […]


Continue.. Detecting, distinguishing, and spatiotemporally tracking photogenerated charge and heat at the nanoscale

Detecting, distinguishing, and spatiotemporally tracking photogenerated charge and heat at the nanoscale

Posted by dbos Berkeley

Kavli Affiliate: Naomi S. Ginsberg | First 5 Authors: Hannah L. Weaver, Cora M. Went, Joeson Wong, Dipti Jasrasaria, Eran Rabani | Summary: Since dissipative processes are ubiquitous in semiconductors, characterizing how electronic and thermal energy transduce and transport at the nanoscale is vital for understanding and leveraging their fundamental properties. For example, in low-dimensional […]


Continue.. Detecting, distinguishing, and spatiotemporally tracking photogenerated charge and heat at the nanoscale

Continuous Wigner-Mott transition at $ν=1/5$

Posted by Cornell

Kavli Affiliate: Debanjan Chowdhury | First 5 Authors: Thomas G. Kiely, Debanjan Chowdhury, , , | Summary: Electrons can organize themselves into charge-ordered states to minimize the effects of long-ranged Coulomb interactions. In the presence of a lattice, commensurability constraints lead to the emergence of incompressible Wigner-Mott insulators at various rational electron fillings, $nu~=p/q$. The […]


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Growth of ultrawide-bandgap BN/diamond heterostructures by pulsed laser deposition

Posted by klaurent Cornell

Kavli Affiliate: Zhiting Tian | First 5 Authors: Abhijit Biswas, Gustavo A. Alvarez, Tao Li, Joyce Christiansen-Salameh, Eugene Jeong | Summary: Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap >4.0 eV), boron nitride (BN) and diamond are important for next-generation high-power electronics. However, in-situ hetero-epitaxy of BN/diamond or vice-versa remains extremely challenging, due to their non-trivial […]


Continue.. Growth of ultrawide-bandgap BN/diamond heterostructures by pulsed laser deposition

Structural, optical, and thermal properties of BN thin films grown on diamond via pulsed laser deposition

Posted by dbos Cornell

Kavli Affiliate: Zhiting Tian | First 5 Authors: Abhijit Biswas, Gustavo A. Alvarez, Tao Li, Joyce Christiansen-Salameh, Eugene Jeong | Summary: Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap >4.0 eV), boron nitride (BN) and diamond are important for next-generation high-power electronics. However, in-situ hetero-epitaxy of BN/diamond or vice-versa remains extremely challenging, due to their non-trivial […]


Continue.. Structural, optical, and thermal properties of BN thin films grown on diamond via pulsed laser deposition

Transferable screened range-separated hybrid functionals for electronic and optical properties of van der Waals materials

Posted by dbos Berkeley

Kavli Affiliate: Jeffrey B. Neaton | First 5 Authors: María Camarasa-Gómez, Ashwin Ramasubramaniam, Jeffrey B. Neaton, Leeor Kronik, | Summary: The accurate description of electronic properties and optical absorption spectra is a long-standing challenge for density functional theory. Recently, the introduction of screened range-separated hybrid (SRSH) functionals for solid-state materials has allowed for the calculation […]


Continue.. Transferable screened range-separated hybrid functionals for electronic and optical properties of van der Waals materials

Incomplete inverse problem for Dirac operator with constant delay

Posted by klaurent Berkeley

Kavli Affiliate: Feng Wang | First 5 Authors: Feng Wang, Chuan-Fu Yang | Summary: In this work, we consider Dirac-type operators with a constant delay less than two-fifths of the interval and not less than one-third of the interval. For our considered Dirac-type operators, an incomplete inverse spectral problem is studied. Specifically, when two complex […]


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Inverse problems for Dirac operators with a constant delay less than half of the interval

Posted by klaurent Berkeley

Kavli Affiliate: Feng Wang | First 5 Authors: Feng Wang, Chuan-Fu Yang | Summary: In this work, we consider Dirac-type operators with a constant delay less than half of the interval and not less than two fifths of the interval. For our considered Dirac-type operators, an inverse spectral problem is studied. Specifically, reconstruction of two […]


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Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy

Posted by dbos Cornell

Kavli Affiliate: Grace Xing | First 5 Authors: Len van Deurzen, Jashan Singhal, Jimy Encomendero, Naomi Pieczulewski, Celesta Chang | Summary: Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared to the bulk AlN substrate, layers of both polarities feature a […]


Continue.. Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy

Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy

Posted by dbos Cornell

Kavli Affiliate: Grace Xing | First 5 Authors: Len van Deurzen, Jashan Singhal, Jimy Encomendero, Naomi Pieczulewski, Celesta Chang | Summary: Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared to the bulk AlN substrate, layers of both polarities feature a […]


Continue.. Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy