Adsorption-controlled Growth of Homoepitaxial c-plane Sapphire Films

Kavli Affiliate: Darrell G. Schlom | First 5 Authors: Lena N. Majer, Tolga Acartürk, Peter A. van Aken, Wolfgang Braun, Luca Camuti | Summary: Sapphire is a technologically highly relevant material, but it poses many challenges to performing epitaxial thin-film deposition. We have identified and applied the conditions for adsorption-controlled homoepitaxial growth of c-plane sapphire. […]


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Universal scaling solution for a rigidity transition: renormalization group flows near the upper critical dimension

Kavli Affiliate: Itai Cohen | First 5 Authors: Stephen J. Thornton, Danilo B. Liarte, Itai Cohen, James P. Sethna, | Summary: Rigidity transitions induced by the formation of system-spanning disordered rigid clusters, like the jamming transition, can be well-described in most physically relevant dimensions by mean-field theories. However, we lack a theoretical description of these […]


Continue.. Universal scaling solution for a rigidity transition: renormalization group flows near the upper critical dimension

Universal scaling solution for a rigidity transition: renormalization group flows near the upper critical dimension

Kavli Affiliate: Itai Cohen | First 5 Authors: Stephen J. Thornton, Danilo B. Liarte, Itai Cohen, James P. Sethna, | Summary: Rigidity transitions induced by the formation of system-spanning disordered rigid clusters, like the jamming transition, can be well-described in most physically relevant dimensions by mean-field theories. A dynamical mean-field theory commonly used to study […]


Continue.. Universal scaling solution for a rigidity transition: renormalization group flows near the upper critical dimension

Correlated Topological Mixed-Valence Insulators in Moiré Hetero-Bilayers

Kavli Affiliate: Debanjan Chowdhury | First 5 Authors: Juan Felipe Mendez-Valderrama, Sunghoon Kim, Debanjan Chowdhury, , | Summary: Moir’e transition metal dichalcogenide (TMD) materials provide an ideal playground for studying the combined interplay of strong interactions and band-topology over a range of electronic fillings. Here we investigate the panoply of interaction-induced electronic phases that arise […]


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Ferroelectric AlBN Films by Molecular Beam Epitaxy

Kavli Affiliate: Farhan Rana | First 5 Authors: Chandrashekhar Savant, Ved Gund, Kazuki Nomoto, Takuya Maeda, Shubham Jadhav | Summary: We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently developed epitaxial nitride metal electrode Nb2N. While a control AlN thin film exhibits standard capacitive behavior, distinct ferroelectric switching is […]


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Spin-filter tunneling detection of antiferromagnetic resonance with electrically-tunable damping

Kavli Affiliate: Daniel C. Ralph | First 5 Authors: Thow Min Jerald Cham, Daniel G. Chica, Kenji Watanabe, Takashi Taniguchi, Xavier Roy | Summary: Antiferromagnetic spintronics offers the potential for higher-frequency operations compared to ferromagnetic spintronics and improved insensitivity to magnetic fields. However, previous electrical techniques to detect antiferromagnetic dynamics have required millimeter-scale samples to […]


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Purcell enhancement and spin spectroscopy of silicon vacancy centers in silicon carbide using an ultra-small mode-volume plasmonic cavity

Kavli Affiliate: Gregory D. Fuchs | First 5 Authors: Jae-Pil So, Jialun Luo, Jaehong Choi, Brendan McCullian, Gregory D. Fuchs | Summary: Silicon vacancy (V$_{Si}$) centers in 4H-silicon carbide have emerged as a strong candidate for quantum networking applications due to their robust electronic and optical properties including a long spin coherence lifetime and bright, […]


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Unmasking charge transfer in the Misfits: ARPES and ab initio prediction of electronic structure in layered incommensurate systems without artificial strain

Kavli Affiliate: Lena F. Kourkoutis | First 5 Authors: Drake Niedzielski, Brendan D. Faeth, Berit H. Goodge, Mekhola Sinha, Tyrel M. McQueen | Summary: Common belief is that the large band shifts observed in incommensurate misfit compounds, e.g. (LaSe)1.14(NbSe2)2, are due to interlayer charge transfer. In contrast, our analysis, based on both ARPES measurements and […]


Continue.. Unmasking charge transfer in the Misfits: ARPES and ab initio prediction of electronic structure in layered incommensurate systems without artificial strain

Efficient Sparse Attention needs Adaptive Token Release

Kavli Affiliate: Dan Luo | First 5 Authors: Chaoran Zhang, Lixin Zou, Dan Luo, Min Tang, Xiangyang Luo | Summary: In recent years, Large Language Models (LLMs) have demonstrated remarkable capabilities across a wide array of text-centric tasks. However, their `large’ scale introduces significant computational and storage challenges, particularly in managing the key-value states of […]


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