Superconductivity in tin telluride films grown by molecular beam epitaxy

Kavli Affiliate: David A. Muller | First 5 Authors: Antonio Gonzalez, Samuel J. Poage, Bernardo Langa, Jr., Deepak Sapkota, Salva Salmani-Rezaie | Summary: The intersection of superconductivity and ferroelectricity hosts a wide range of exotic quantum phenomena. Here, we report on the observation of superconductivity in high-quality tin telluride films grown by molecular beam epitaxy. […]


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The effect of boron incorporation on leakage and wake-up in ferroelectric Al_{1-x}Sc_xN

Kavli Affiliate: Debdeep Jena | First 5 Authors: Maike Gremmel, Chandrashekhar Prakash Savant, Debaditya Bhattacharya, Georg Schönweger, Debdeep Jena | Summary: This study explores the influence of boron incorporation on the structural and electrical properties of ferroelectric Aluminum Scandium Nitride (Al_{1-x}Sc_xN ) thin films, focusing on leakage currents, wake-up effects, and imprint behavior. Al_{1-x}Sc_xN films […]


Continue.. The effect of boron incorporation on leakage and wake-up in ferroelectric Al_{1-x}Sc_xN

Trilinos: Enabling Scientific Computing Across Diverse Hardware Architectures at Scale

Kavli Affiliate: Christopher Ober | First 5 Authors: Matthias Mayr, Alexander Heinlein, Christian Glusa, Siva Rajamanickam, Maarten Arnst | Summary: Trilinos is a community-developed, open-source software framework that facilitates building large-scale, complex, multiscale, multiphysics simulation code bases for scientific and engineering problems. Since the Trilinos framework has undergone substantial changes to support new applications and […]


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Improper Ferroelectricity at the Monolayer Limit

Kavli Affiliate: Darrell G. Schlom | First 5 Authors: Yilin Evan Li, Harikrishnan KP, Haidong Lu, Rachel A. Steinhardt, Megan E. Holtz | Summary: Ultrathin ferroelectric films with out-of-plane polarization and high Curie temperatures are key to miniaturizing electronic devices. Most ferroelectrics employed in devices are proper ferroelectrics, where spontaneous polarization is the primary order […]


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Surface-dominant transport in Weyl semimetal NbAs nanowires for next-generation interconnects

Kavli Affiliate: Zhiting Tian | First 5 Authors: Yeryun Cheon, Mehrdad T. Kiani, Yi-Hsin Tu, Sushant Kumar, Nghiep Khoan Duong | Summary: Ongoing demands for smaller and more energy efficient electronic devices necessitate alternative interconnect materials with lower electrical resistivity at reduced dimensions. Despite the emergence of many promising candidates, synthesizing high quality nanostructures remains […]


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Visualizing the breakdown of the quantum anomalous Hall effect

Kavli Affiliate: Katja C. Nowack | First 5 Authors: George M. Ferguson, Run Xiao, Anthony R. Richardella, Austin Kaczmarek, Nitin Samarth | Summary: The creation of topologically non-trivial matter across electronic, mechanical, cold-atom, and photonic platforms is advancing rapidly, yet understanding the breakdown of topological protection remains a major challenge. In this work, we use […]


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Epitaxial high-K AlBN barrier GaN HEMTs

Kavli Affiliate: Grace Xing | First 5 Authors: Chandrashekhar Savant, Thai-Son Nguyen, Kazuki Nomoto, Saurabh Vishwakarma, Siyuan Ma | Summary: We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize ultra-thin barrier AlBN/GaN high electron mobility transistors […]


Continue.. Epitaxial high-K AlBN barrier GaN HEMTs

Epitaxial high-K AlBN barrier GaN HEMTs

Kavli Affiliate: Grace Xing | First 5 Authors: Chandrashekhar Savant, Thai-Son Nguyen, Kazuki Nomoto, Saurabh Vishwakarma, Siyuan Ma | Summary: We report a polarization-induced 2D electron gas (2DEG) at an epitaxial AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long conducting channel, we realize ultra-thin barrier AlBN/GaN high electron mobility transistors […]


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Growth and characterization of single crystal cubic TaN and hexagonal Ta$_2$N films on c-plane Sapphire

Kavli Affiliate: Grace Xing | First 5 Authors: Anand Ithepalli, Amit Rohan Rajapurohita, Arjan Singh, Rishabh Singh, John Wright | Summary: Two single crystal phases of tantalum nitride were stabilized on c-plane sapphire using molecular beam epitaxy. The phases were identified to be $delta$-TaN with a rocksalt cubic structure and $gamma$-Ta$_2$N with a hexagonal structure. […]


Continue.. Growth and characterization of single crystal cubic TaN and hexagonal Ta$_2$N films on c-plane Sapphire

Growth and characterization of single crystal cubic TaN and hexagonal Ta$_2$N films on c-plane Sapphire

Kavli Affiliate: Grace Xing | First 5 Authors: Anand Ithepalli, Amit Rohan Rajapurohita, Arjan Singh, Rishabh Singh, John Wright | Summary: Two single crystal phases of tantalum nitride were stabilized on c-plane sapphire using molecular beam epitaxy. The phases were identified to be $delta$-TaN with a rocksalt cubic structure and $gamma$-Ta$_2$N with a hexagonal structure. […]


Continue.. Growth and characterization of single crystal cubic TaN and hexagonal Ta$_2$N films on c-plane Sapphire