Kavli Affiliate: Grace Xing
| First 5 Authors: Joseph E. Dill, Chuan F. C. Chang, Debdeep Jena, Huili Grace Xing,
| Summary:
We develop a two-carrier Hall effect model fitting algorithm to analyze
temperature-dependent magnetotransport measurements of a high-density
($sim4times10^{13}$ cm$^2$/Vs) polarization-induced two-dimensional hole gas
(2DHG) in a GaN/AlN heterostructure. Previous transport studies in GaN 2DHGs
have reported a two-fold reduction in 2DHG carrier density from room to
cryogenic temperature. We demonstrate that this apparent drop in carrier
density is an artifact of assuming one species of carriers when interpreting
Hall effect measurements. Using an appropriate two-carrier model, we resolve
light hole (LH) and heavy hole (HH) carrier densities congruent with
self-consistent Poisson-k$cdot$p simulations and observe an LH mobility of
$sim$1400 cm$^2$/Vs and HH mobility of $sim$300 cm$^2$/Vs at 2 K. This report
constitutes the first experimental signature of LH band conductivity reported
in GaN.
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