High temperature diffusion enabled epitaxy of the Ti-O system

Kavli Affiliate: Joseph Falson

| First 5 Authors: Jeong Rae Kim, Sandra Glotzer, Adrian Llanos, Salva Salmani-Rezaie, Joseph Falson

| Summary:

High temperatures promote kinetic processes which can drive crystal synthesis
towards ideal thermodynamic conditions, thereby realizing samples of superior
quality. While accessing very high temperatures in thin-film epitaxy is
becoming increasingly accessible through laser-based heating methods,
demonstrations of such utility are still emerging. Here we realize a novel
self-regulated growth mode in the Ti-O system by relying on thermally activated
diffusion of oxygen from an oxide substrate. We demonstrate oxidation
selectivity of single phase films with superior crystallinity to conventional
approaches as evidenced by structural and electronic measurements. The
diffusion-enabled mode is potentially of wide use in the growth of transition
metal oxides, opening up new opportunities for ultra-high purity epitaxial
platforms based on d -orbital systems.

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