Kavli Affiliate: Long Zhang
| First 5 Authors: Kunya Yang, Wei Xia, Xinrun Mi, Yiyue zhang, Long zhang
| Summary:
The large Nernst effect is advantageous for developing transverse Nernst
thermoelectric generators or Ettingshausen coolers within a single component,
avoiding the complexity of electron- and hole-modules in longitudinal Seebeck
thermoelectric devices. We report a large Nernst signal reaching 130 uV/K at 8
K and 13 T in the layered metallic antiferromagnet EuAl$_2$Si$_2$. Notably,
this large transverse Nernst thermopower is two orders of magnitude greater
than its longitudinal counterpart. The Nernst coefficient peaks around 4 K and
8 K at 3 T and 13 T, respectively. At similar temperatures, both the Hall
coefficient and the Seebeck signal change sign. Additionally, nearly
compensated electron- and hole-like carriers with high mobility ($sim$ 4000
cm$^2$/Vs at 4 K) are revealed from the magnetoconductivity. These findings
suggest that the large Nernst effect and vanishing Seebeck thermopower in
EuAl$_2$Si$_2$ are due to the compensated electron- and hole-like bands, along
with the high mobility of the Weyl band near the Fermi level. Our results
underscore the importance of band compensation and topological fermiology in
achieving large Nernst thermopower and exploring potential Nernst
thermoelectric applications at low temperatures.
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