Kavli Affiliate: Giordano Scappucci
| Summary:
Hybrid superconductor-semiconductor systems provide a versatile platform for quantum technologies, ranging from superconducting-spin interfaces to topological quantum devices. Progress toward scalable implementations requires superconductors that exhibit high critical fields ($>1$T) at accessible temperatures integrated with low-disorder semiconductor heterostructures. Here we demonstrate a superconducting platinum iridium germanosilicide (PtIrSiGe), with critical out-of-plane magnetic field up to $B_perp = 1.9$T and critical temperature of $T_csim 1.85$K, integrated with planar germanium with mobility $μ= 1.3times 10^6$cm$^2$/Vs via top-down lithography fabrication. We show that the integrity of the germanium quantum well and mobility and density of the 2D hole gas are preserved despite annealing at $500°$C, a temperature comparable to that used for strained germanium epitaxy. We further demonstrate proximitisation of a buried germanium quantum well in a gate-defined Josephson junction/SQUID on a Ge/SiGe heterostructure.
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