Kavli Affiliate: Catherine E. Grant
| First 5 Authors: Benjamin Schneider, Gregory Prigozhin, Richard F. Foster, Marshall W. Bautz, Hope Fu
| Summary:
The advent of back-illuminated complementary metal-oxide-semiconductor (CMOS)
sensors and their well-known advantages over charge-coupled devices (CCDs) make
them an attractive technology for future X-ray missions. However, numerous
challenges remain, including improving their depletion depth and identifying
effective methods to calculate per-pixel gain conversion. We have tested a
commercial Sony IMX290LLR CMOS sensor under X-ray light using an $^{55}$Fe
radioactive source and collected X-ray photons for $sim$15 consecutive days
under stable conditions at regulated temperatures of 21{deg}C and 26{deg}C.
At each temperature, the data set contained enough X-ray photons to produce one
spectrum per pixel consisting only of single-pixel events. We determined the
gain dispersion of its 2.1 million pixels using the peak fitting and the Energy
Calibration by Correlation (ECC) methods. We measured a gain dispersion of
0.4% at both temperatures and demonstrated the advantage of the ECC method in
the case of spectra with low statistics. The energy resolution at 5.9 keV after
the per-pixel gain correction is improved by $gtrsim$10 eV for single-pixel
and all event spectra, with single-pixel event energy resolution reaching
$123.6pm 0.2$ eV, close to the Fano limit of silicon sensors at room
temperature. Finally, our long data acquisition demonstrated the excellent
stability of the detector over more than 30 days under a flux of $10^4$ photons
per second.
| Search Query: ArXiv Query: search_query=au:”Catherine E. Grant”&id_list=&start=0&max_results=3