Kavli Affiliate: Darrell G. Schlom
| First 5 Authors: Lena N. Majer, Tolga Acartürk, Peter A. van Aken, Wolfgang Braun, Luca Camuti
| Summary:
Sapphire is a technologically highly relevant material, but it poses many
challenges to performing epitaxial thin-film deposition. We have identified and
applied the conditions for adsorption-controlled homoepitaxial growth of
c-plane sapphire. The films thus grown are atomically smooth, have a controlled
termination, and are of outstanding crystallinity. Their chemical purity
exceeds that of the substrates. The films exhibit exceptional optical
properties such as a single-crystal-like bandgap and a low density of F+
centers.
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