Engineering Fractional Chern Insulators through Periodic Strain in Monolayer Graphene and Transition Metal Dichalcogenides

Kavli Affiliate: Zheng Zhu

| First 5 Authors: Yuchen Liu, Zheng Zhu, , ,

| Summary:

We propose the realization of interaction-driven insulators in periodically
strained monolayer graphene and transition metal dichalcogenides (TMDs).
Through extensive many-body exact diagonalization, we provide compelling
evidence for various fractional Chern insulators (FCIs) in both strained
monolayer graphene and TMDs, including the Laughlin states, Halperin states,
and FCIs with tunable topological orders in Chern number |C| = 2 bands. We also
discuss the relationship among band geometry, band filling and spin
polarization. Notably, by examining both the entanglement spectrum and
many-body Chern number, we reveal a state with Laughlin-like topological order
emerging in the |C| = 2 band, which challenges the existing theoretical
understanding of high Chern number (high-C) FCIs. These findings suggest that
periodically strained monolayer graphene and TMDs provide promising platforms
for engineering fractional Chern insulators and underscore the need for further
investigation into high-C FCIs.

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