Epitaxial rare-earth doped complex oxide thin films for infrared applications

Kavli Affiliate: Darrell G. Schlom

| First 5 Authors: Mythili Surendran, Joshua Rollag, Christopher E. Stevens, Ching-Tai Fu, Harish Kumarasubramanian

| Summary:

Rare earth dopants are one of the most extensively studied optical emission
centers for a broad range of applications such as laser optoelectronics,
sensing, lighting, and quantum information technologies due to their narrow
optical linewidth and exceptional coherence properties. Epitaxial doped oxide
thin films can serve as a promising and controlled host to investigate
rare-earth dopants suitable for scalable quantum memories, on-chip lasers and
amplifiers. Here, we report high-quality epitaxial thin films of Tm-doped
CaZrO$_3$ grown by pulsed laser deposition for infrared optoelectronic and
quantum memory applications. We perform extensive structural and chemical
characterization to probe the crystallinity of the films and the doping
behavior. Low temperature photoluminescence measurements show sharp radiative
transitions in the short-wave infrared range of 1.75 – 2 mu m.

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