Kavli Affiliate: Lena F. Kourkoutis
| First 5 Authors: James L Hart, Saif Siddique, Noah Schnitzer, Stephen D. Funni, Lena F. Kourkoutis
| Summary:
The charge density wave (CDW) material 1T-TaS$_2$ exhibits a pulse-induced
insulator-to-metal transition, which shows promise for next-generation
electronics such as memristive memory and neuromorphic hardware. However, the
rational design of TaS$_2$ devices is hindered by a poor understanding of the
switching mechanism, the pulse-induced phase, and the influence of material
defects. Here, we operate a 2-terminal TaS$_2$ device within a scanning
transmission electron microscope (STEM) at cryogenic temperature, and directly
visualize the changing CDW structure with nanoscale spatial resolution and down
to 300 {mu}s temporal resolution. We show that the pulse-induced transition is
driven by Joule heating, and that the pulse-induced state corresponds to nearly
commensurate and incommensurate CDW phases, depending on the applied voltage
amplitude. With our in operando cryo-STEM experiments, we directly correlate
the CDW structure with the device resistance, and show that dislocations
significantly impact device performance. This work resolves fundamental
questions of resistive switching in TaS$_2$ devices critical for engineering
reliable and scalable TaS$_2$ electronics.
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