High Gradient Silicon Carbide Immersion Lens Ultrafast Electron Sources

Kavli Affiliate: Robert L. Byer

| First 5 Authors: Kenneth J. Leedle, Uwe Niedermayer, Eric Skär, Karel Urbanek, Yu Miao

| Summary:

We present two compact ultrafast electron injector designs with integrated
focusing that provide high peak brightness of up to $1.9*10^{12} A/m^2Sr^2$
with 10s of electrons per laser pulse using silicon carbide electrodes and
silicon nanotip emitters. We demonstrate a few centimeter scale 96 keV
immersion lens electron source and a 57 keV immersion lens electron source with
a 19 kV/mm average acceleration gradient, nearly double the typical 10 kV/mm
used in DC electron sources. The brightness of the electron sources is measured
alongside start-to-end simulations including space charge effects. These
sources are suitable for dielectric laser accelerator experiments, ultrafast
electron diffraction, and other applications where a compact high brightness
electron source is required.

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