Using Landau quantization to probe disorder in semiconductor heterostructures

Kavli Affiliate: Giordano Scappucci

| First 5 Authors: Asser Elsayed, Asser Elsayed, , ,

| Summary:

Understanding scattering mechanisms in semiconductor heterostructures is
crucial to reducing sources of disorder and ensuring high yield and uniformity
in large spin qubit arrays. Disorder of the parent two-dimensional electron or
hole gas is commonly estimated by the critical, percolation-driven density
associated with the metal-insulator transition. However, a reliable estimation
of the critical density within percolation theory is hindered by the need to
measure conductivity with high precision at low carrier densities, where
experiments are most difficult. Here, we connect experimentally percolation
density and quantum Hall plateau width, in line with an earlier heuristic
intuition, and offer an alternative method for characterizing semiconductor
heterostructure disorder.

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