Kavli Affiliate: Gang Su
| First 5 Authors: Chun-Yi Xue, Chun-Yi Xue, , ,
| Summary:
We demonstrate that spin PN junctions-magnetic semiconductor homojunctions
with spin splitting-induced band offsets-fundamentally redefine carrier
transport via spin-dependent recom bination probabilities. By integrating this
mechanism into the Shockley model, we predict
a near 100 enhancement in magnetoresistance sensitivity under small forward
bias, where exponen tial modulation of recombination lifetimes by magnetic
fields amplifies resistance changes.
Angular momentum conservation enables magnetically tunable circularly
polarized luminescence:
exclusive conduction-band or valence-band splitting in both neutral regions
achieves near-half po larization, while global splitting degrades emission
coherence. Furthermore, we propose
a "spin Zener filter" exploiting 1eV valence band splitting in (Ga, Mn)As,
where spin-dependent
barrier heights generate near 100% spin-polarized tunneling currents within a
voltage-selective win dow. These results establish spin PN junctions as a
universal design paradigm for magnetically
amplified electronics, polarization-programmable optoelectronics, and
voltage-gated spin injection
without ferromagnetic contacts.
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