Kavli Affiliate: Grace Xing
| First 5 Authors: Yu-Hsin Chen, Jimy Encomendero, Huili Grace Xing, Debdeep Jena,
| Summary:
We report the observation of Shubnikov-de Haas (SdH) oscillations in
coherently strained, low-dislocation AlN/GaN/AlN quantum wells (QWs), including
both undoped and $delta$-doped structures. SdH measurements reveal a single
subband occupation in the undoped GaN QW and two subband occupation in the
$delta$-doped GaN QW. More importantly, SdH oscillations enable direct
measurement of critical two-dimensional electron gas (2DEG) parameters at the
Fermi level: carrier density and ground state energy level, electron effective
mass ($m^* approx 0.289,m_{rm e}$ for undoped GaN QW and $m^* approx
0.298,m_{rm e}$ for $delta$-doped GaN QW), and quantum scattering time
($tau_{rm q} approx 83.4 , text{fs}$ for undoped GaN QW and $tau_{rm q}
approx 130.6 , text{fs}$ for $delta$-doped GaN QW). These findings provide
important insights into the fundamental properties of 2DEGs that are strongly
quantum confined in the thin GaN QWs, essential for designing nitride
heterostructures for high-performance electronic applications.
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