Kavli Affiliate: Grace Xing
| First 5 Authors: Len van Deurzen, Thai-Son Nguyen, Joseph Casamento, Huili Grace Xing, Debdeep Jena
| Summary:
We demonstrate epitaxial lattice-matched Al$_{0.89}$Sc$_{0.11}$N/GaN ten and
twenty period distributed Bragg reflectors (DBRs) grown on c-plane bulk n-type
GaN substrates by plasma-enhanced molecular beam epitaxy (PA-MBE). Resulting
from a rapid increase of in-plane lattice coefficient as scandium is
incorporated into AlScN, we measure a lattice-matched condition to $c$-plane
GaN for a Sc content of just 11%, resulting in a large refractive index
mismatch $mathrm{Delta n}$ greater than 0.3 corresponding to an index
contrast of $mathrm{Delta n/n_{GaN}}$ = 0.12 with GaN. The DBRs demonstrated
here are designed for a peak reflectivity at a wavelength of 400 nm reaching a
reflectivity of 0.98 for twenty periods. It is highlighted that AlScN/GaN
multilayers require fewer periods for a desired reflectivity than other
lattice-matched Bragg reflectors such as those based on AlInN/GaN multilayers.
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