Conductance Plateaus at Quantum Hall Integer Filling Factors in Germanium Quantum Point Contacts

Kavli Affiliate: Giordano Scappucci

| First 5 Authors: Karina Hudson, Karina Hudson, , ,

| Summary:

Constricting transport through a one-dimensional quantum point contact in the
quantum Hall regime enables gate-tunable selection of the edge modes
propagating between voltage probe electrodes. Here we investigate the quantum
Hall effect in a quantum point contact fabricated on low disorder strained
germanium quantum wells. For increasing magnetic field, we observe Zeeman
spin-split 1D ballistic hole transport evolving to integer quantum Hall states,
with well-defined quantised conductance increasing in multiples of $e^2/h$ down
to the first integer filling factor $nu=1$. These results establish strained
germanium as a viable platform for complex experiments probing many-body states
and quantum phase transitions.

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