Kavli Affiliate: Michael Crommie
| First 5 Authors: Jingxu Xie, Zuocheng Zhang, Haodong Zhang, Vikram Nagarajan, Wenyu Zhao
| Summary:
Advanced microelectronics in the future may require semiconducting channel
materials beyond silicon. Two-dimensional (2D) semiconductors, characterized by
their atomically thin thickness, hold immense promise for high-performance
electronic devices at the nanometer scale with lower heat dissipation. One
challenge for achieving high-performance 2D semiconductor field effect
transistors (FET), especially for p-type materials, is the high electrical
contact resistance present at the metal-semiconductor interface. In
conventional bulk semiconductors, low resistance ohmic contact is realized
through heavy substitutional doping with acceptor or donor impurities at the
contact region. The strategy of substitutional doping, however, does not work
for p-type 2D semiconductors such as monolayer tungsten diselenide (WSe$_2$).In
this study, we developed highly efficient charge-transfer doping with
WSe$_2$/$alpha$-RuCl$_3$ heterostructures to achieve low-resistance ohmic
contact for p-type WSe$_2$ transistors. We show that a hole doping as high as
3$times$10$^{13}$ cm$^{-2}$ can be achieved in the WSe$_2/alpha$-RuCl$_3$
heterostructure due to its type-III band alignment. It results in an Ohmic
contact with resistance lower than 4 k Ohm $mu$m at the p-type monolayer
WSe$_2$/metal junction. at room temperature. Using this low-resistance contact,
we demonstrate high-performance p-type WSe$_2$ transistors with a saturation
current of 35 $mu$A$cdot$ $mu$m$^{-1}$ and an I$_{ON}$/I$_{OFF}$ ratio
exceeding 10$^9$ It could enable future microelectronic devices based on 2D
semiconductors and contribute to the extension of Moore’s law.
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