Element-specific electronic and structural dynamics using transient X-ray spectroscopy

Kavli Affiliate: Scott K. Cushing

| First 5 Authors: Hanzhe Liu, Isabel M. Klein, Jonathan M. Michelsen, Scott K. Cushing,

| Summary:

Transient X-ray absorption techniques can measure ultrafast dynamics of the
elemental edges in a material or multiple layer junction, giving them immense
potential for deconvoluting concurrent processes. However, the interpretation
of the photoexcited changes to an X-ray edge is not as simple as directly
probing a transition with optical or infrared wavelengths. The core hole left
by the core-level transition distorts the measured absorption and reflection
spectra, both hiding and revealing different aspects of a photo-induced
process. In this perspective, we describe the implementation and interpretation
of transient X-ray experiments. This description includes a guide of how to
choose the best wavelength and corresponding X-ray sources when designing an
experiment. As an example, we focus on the rising use of extreme ultraviolet
(XUV) spectroscopy for understanding performance limiting behaviors in solar
energy materials, such as measurements of polaron formation, electron and hole
kinetics, and charge transport in each layer of a metal-oxide-semiconductor
junction. The ability of measuring photoexcited carriers in each layer of a
multilayer junction could prove particularly impactful in the study of
molecules, materials, and their combinations that lead to functional devices in
photochemistry and photoelectrochemistry.

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