Kavli Affiliate: Menno Veldhorst
| First 5 Authors: Kushagra Aggarwal, Andrea Hofmann, Daniel Jirovec, Ivan Prieto, Amir Sammak
| Summary:
Hole gases in planar germanium can have high mobilities in combination with
strong spin-orbit interaction and electrically tunable g-factors, and are
therefore emerging as a promising platform for creating hybrid
superconductor-semiconductor devices. A key challenge towards hybrid Ge-based
quantum technologies is the design of high-quality interfaces and
superconducting contacts that are robust against magnetic fields. In this work,
by combining the assets of aluminum, which provides good contact to the Ge, and
niobium, which has a significant superconducting gap, we demonstrate highly
transparent low-disordered JoFETs with relatively large IcRn products that
are capable of withstanding high magnetic fields. We furthermore demonstrate
the ability of phase-biasing individual JoFETs, opening up an avenue to explore
topological superconductivity in planar Ge. The persistence of
superconductivity in the reported hybrid devices beyond 1.8 Tesla paves the way
towards integrating spin qubits and proximity-induced superconductivity on the
same chip.
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