Nanoscale Strain Engineering of Giant Pseudo-Magnetic Fields, Valley Polarization and Topological Channels in Graphene

Kavli Affiliate: N. C. Yeh

| First 5 Authors: C. -C. Hsu, M. L. Teague, J. -Q. Wang, N. -C. Yeh,

| Summary:

The existence of nontrivial Berry phases associated with two inequivalent
valleys in graphene provides interesting opportunities for investigating the
valley-projected topological states. Examples of such studies include
observation of anomalous quantum Hall effect in monolayer graphene,
demonstration of topological zero modes in molecular graphene assembled by
scanning tunneling microscopy, and detection of topological valley transport
either in graphene superlattices or at bilayer graphene domain walls. However,
all aforementioned experiments involved non-scalable approaches of either
mechanically exfoliated flakes or atom-by-atom constructions. Here we report an
approach to manipulating the topological states in monolayer graphene via
nanoscale strain engineering at room temperature. By placing strain-free
monolayer graphene on architected nanostructures to induce global inversion
symmetry breaking, we demonstrate the development of giant pseudo-magnetic
fields (up to 800 Tesla), valley polarization, and periodic one-dimensional
topological channels for protected propagation of chiral modes in strained
graphene, thus paving a pathway towards scalable graphene-based valleytronics.

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