Kavli Affiliate: Long Zhang
| First 5 Authors: , , , ,
| Summary:
Altermagnets with nonrelativistic momentum-dependent spin splitting and
compensated net magnetic moments have recently garnered significant interest in
spintronics, particularly as pinning layers in magnetic tunnel junctions
(MTJs). However, room temperature (RT) altermagnet-based MTJs with tunable
tunneling magnetoresistance (TMR) or electroresistance (TER) modulated by
multiferroicity remain largely unexplored. Here, we propose an experimentally
fabricable above-RT multiferroic MTJ, comprising an altermagnetic metal,
ferroelectric barrier, and ferromagnetic metal-epitomized by a
CrSb/In2Se3/Fe3GaTe2 heterostructure. Our calculations with first-principles
and nonequilibrium Green function method indicate that the architecture enables
magnetically switchable TER, electrically tunable TMR, and dual-mode
controllable spin filtering. To disentangle the roles of ferroelectricity and
the tunnel barrier, nonferroelectric Sb2Se3 and a vacuum gap are exploited as
control cases. Remarkably, the system achieves TMR up to 2308%, TER of 707%,
and near-perfect spin filtering efficiency. Both TMR and TER are considerable
for CrSb/In2Se3/Fe3GaTe2 with either Cr or Sb interface. The transport
performance is robust under bias voltage. These findings demonstrate the
above-RT multiferroic altermagnet-based MTJs and highlight their exciting
potential as a versatile platform for next-generation spin dynamics, magnetic
sensing, and quantum logic nanodevices.
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