Kavli Affiliate: Zhiting Tian
| First 5 Authors: Yeryun Cheon, Mehrdad T. Kiani, Yi-Hsin Tu, Sushant Kumar, Nghiep Khoan Duong
| Summary:
Ongoing demands for smaller and more energy efficient electronic devices
necessitate alternative interconnect materials with lower electrical
resistivity at reduced dimensions. Despite the emergence of many promising
candidates, synthesizing high quality nanostructures remains a major bottleneck
in evaluating their performance. Here, we report the successful synthesis of
Weyl semimetal NbAs nanowires via thermomechanical nanomolding, achieving
single crystallinity and controlled diameters as small as 40 nm. Our NbAs
nanowires exhibit a remarkably low room-temperature resistivity of 9.7 +/- 1.6
microOhm-cm, which is three to four times lower than their bulk counterpart.
Theoretical calculations corroborate the experimental observations, attributing
this exceptional resistivity reduction to surface dominant conduction with long
carrier lifetime at finite temperatures. Further characterization of NbAs
nanowires and bulk single crystals reveals high breakdown current density,
robust stability, and superior thermal conductivity. Collectively, these
properties highlight the strong potential of NbAs nanowires as next-generation
interconnects, which can surpass the limitations of current copper-based
interconnects. Technologically, our findings present a practical application of
topological materials, while scientifically showcasing the fundamental
properties uniquely accessible in nanoscale platforms.
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