Kavli Affiliate: R. Glenn Morris
| First 5 Authors: Tanmoy Chattopadhyay, Sven Herrmann, Matthew Kaplan, Peter Orel, Kevan Donlon
| Summary:
The Single electron Sensitive Read Out (SiSeRO) is a novel on-chip charge
detector output stage for charge-coupled device (CCD) image sensors. Developed
at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a
depleted internal gate beneath the transistor channel. The transistor
source-drain current is modulated by the transfer of charge into the internal
gate. At Stanford, we have developed a readout module based on the drain
current of the on-chip transistor to characterize the device. In our earlier
work, we characterized a number of first prototype SiSeROs with the MOSFET
transistor channels at the surface layer. An equivalent noise charge (ENC) of
around 15 electrons root mean square (RMS) was obtained. In this work, we
examine the first buried-channel SiSeRO. We have achieved substantially
improved noise performance of around 4.5 electrons root mean square (RMS) and a
full width half maximum (FWHM) energy resolution of 132 eV at 5.9 keV, for a
readout speed of 625 kpixel/s. We also discuss how digital filtering techniques
can be used to further improve the SiSeRO noise performance. Additional
measurements and device simulations will be essential to further mature the
SiSeRO technology. This new device class presents an exciting new technology
for the next-generation astronomical X-ray telescopes requiring fast,
low-noise, radiation-hard megapixel imagers with moderate spectroscopic
resolution.
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