Kavli Affiliate: Simon Groblacher
| First 5 Authors: Zizheng Li, Zizheng Li, , ,
| Summary:
Amorphous silicon carbide (a-SiC) has emerged as a compelling candidate for
applications in integrated photonics, known for its high refractive index, high
optical quality, high thermo-optic coefficient, and strong third-order
nonlinearities. Furthermore, a-SiC can be easily deposited via CMOS-compatible
chemical vapor deposition (CVD) techniques, allowing for precise thickness
control and adjustable material properties on arbitrary substrates. Silicon
nitride (SiN) is an industrial well-established and well-matured platform,
which exhibits ultra-low propagation loss, but it is suboptimal for
high-density reconfigurable photonics due to the large minimum bending radius
and constrained tunability. In this work, we monolithically combine a-SiC with
SiN photonics, leveraging the merits of both platforms, and achieve the
a-SiC/SiN heterogeneous integration with an on-chip interconnection loss of
0.32$pm$0.10 dB, and integration density increment exceeding 4,444-fold. By
implementing active devices on a-SiC, we achieve 27 times higher thermo-optic
tuning efficiency, with respect to the SiN photonic platform. In addition, the
a-SiC/SiN platform gives the flexibility to choose the optimal fiber-to-chip
coupling strategy depending on the interfacing platform, with efficient
side-coupling on SiN and grating-coupling on a-SiC platform. The proposed
a-SiC/SiN photonic platform can foster versatile applications in programmable
and quantum photonics, nonlinear optics, and beyond.
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