Kavli Affiliate: Austin J. Minnich
| First 5 Authors: Mete M. Bayrak, Mete M. Bayrak, , ,
| Summary:
The high frequency performance and yield of III-V semiconductor devices such
as InP HEMTs is negatively impacted by subsurface etch damage and non-uniform
etch depth over the wafer. Atomic layer etching (ALE) has the potential to
overcome this challenge because of its ability to etch with Angstrom-scale
precision, low damage, and intrinsic wafer-scale uniformity. Here, we report an
ALE process for InGaAs based on sequential atomic hydrogen and oxygen gas
exposures. An etch rate of 0.095 rA/cycle was observed at 350 degC using
ex-situ spectroscopic ellipsometry. The sample remains atomically smooth after
200 cycles of ALE. This process could be employed as a gate recess etch step in
InP HEMT fabrication to improve microwave performance and yield.
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