Kavli Affiliate: Giordano Scappucci
| First 5 Authors: Davide Costa, Karina Hudson, Patrick Del Vecchio, Lucas E. A. Stehouwer, Alberto Tosato
| Summary:
Ge and Si strained quantum wells have enabled the most advanced spin-qubit
quantum processors, but they are deposited on defective, metamorphic SiGe
substrates, which may impact device performance and scaling. Here we introduce
an alternative platform, based on a heterojunction between unstrained Ge and a
strained SiGe barrier, which is lattice-matched to a Ge substrate. In a
structure with a 52-nm-thick strained SiGe barrier, we demonstrate a
low-disorder two-dimensional hole gas with a high-mobility of
1.33$times$10$^5$ cm$^2$/Vs and a low percolation density of
1.4(1)$times$10$^1$$^0$ cm$^-$$^2$. Quantum transport measurements show that
confined holes have a strong density-dependent in-plane effective mass and
out-of-plane $g$-factor, pointing to a significant heavy-hole–light-hole
mixing in agreement with theory. The expected strong spin-orbit interaction,
possibility of isotopic purification, and ability to host superconducting
pairing correlations make this platform appealing for fast quantum hardware and
hybrid quantum systems.
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