Kavli Affiliate: Daniel C. Ralph
| First 5 Authors: Bozo Vareskic, Finn G. Kennedy, Takashi Taniguchi, Kenji Watanabe, Kenji Yasuda
| Summary:
We fabricate and measure electrically-gated tunnel junctions in which the
insulating barrier is a sliding van der Waals ferroelectric made from
parallel-stacked bilayer hexagonal boron nitride and the electrodes are
single-layer graphene. Despite the nominally-symmetric tunnel-junction
structure, these devices can exhibit substantial electroresistance upon
reversing the ferroelectric polarization. The magnitude and sign of tunneling
electroresistance are tunable by bias and gate voltage. We show that this
behavior can be understood within a simple tunneling model that takes into
account the quantum capacitance of the graphene electrodes, so that the
tunneling densities of states in the electrodes are separately modified as a
function of bias and gate voltage.
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