Kavli Affiliate: Long Zhang
| First 5 Authors: Long Zhang, Guoying Gao, , ,
| Summary:
Altermagnets (AMs) with non-relativistic momentum-dependent spin splitting
and compensated net magnetic moments have recently garnered profound
fascination. Their idiosyncratic electronic structures facilitate spintronics
and electronics, yet room-temperature (RT) AM-based magnetic tunnel junctions
(MTJs) with versatile tunneling magnetoresistance (TMR) and tunneling
electroresistance (TER) regulated by multiferroics remain uncharted frontiers.
We herein construct an experiment-fabricable above-RT MTJ, comprising
altermagnetic metal/ferroelectric barrier/magnetic metal epitomized by
CrSb/In2Se3/Fe3GaTe2. Magnetism- (Ferroelectricity-) manipulatable TER (TMR)
and both approaches-controllable spin filtering are attained. Non-ferroelectric
Sb2Se3 and vacuum layer are exploited as counterpoints to discern the roles of
ferroelectric and tangible barrier, respectively. High TMR, TER and spin
filtering efficiency of 1031/2308 %, 328 % and ~100 % (near-perfect) can be
accomplished, respectively. Our results of the initial investigation for
above-RT multiferroic AM-based MTJs avail the evolution of advanced spin
transport, sensing and logic nano-devices.
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