Kavli Affiliate: Debdeep Jena
| First 5 Authors: Maike Gremmel, Chandrashekhar Prakash Savant, Debaditya Bhattacharya, Georg Schönweger, Debdeep Jena
| Summary:
This study explores the influence of boron incorporation on the structural
and electrical properties of ferroelectric Aluminum Scandium Nitride
(Al_{1-x}Sc_xN ) thin films, focusing on leakage currents, wake-up effects, and
imprint behavior. Al_{1-x}Sc_xN films were incorporated with varying boron
concentrations and analyzed under different deposition conditions to determine
their structural integrity and ferroelectric performance. Key findings include
a reduction in leakage currents, non-trivial alterations in bandgap energy as
well as an increasing coercive fields with increasing boron content. Films with
6-13 at.% boron exhibited N-polar growth, while those with 16 at.% boron showed
mixed polarity after deposition, which affected their ferroelectric response
during the initial switching cycles – as did the addition of boron itself
compared to pure Al1-xScxN . With increasing boron content, wake-up became
gradually more pronounced and was strongest for pure Al_{1-x}B_xN .
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