Kavli Affiliate: Grace Xing
| First 5 Authors: Chandrashekhar Savant, Thai-Son Nguyen, Kazuki Nomoto, Saurabh Vishwakarma, Siyuan Ma
| Summary:
We report a polarization-induced 2D electron gas (2DEG) at an epitaxial
AlBN/GaN heterojunction grown on a SiC substrate. Using this 2DEG in a long
conducting channel, we realize ultra-thin barrier AlBN/GaN high electron
mobility transistors that exhibit current densities of more than 0.25 A/mm,
clean current saturation, a low pinch-off voltage of -0.43 V, and a peak
transconductance of 0.14 S/mm. Transistor performance in this preliminary
realization is limited by the contact resistance. Capacitance-voltage
measurements reveal that introducing 7 % B in the epitaxial AlBN barrier on GaN
boosts the relative dielectric constant of AlBN to 16, higher than the AlN
dielectric constant of 9. Epitaxial high-K barrier AlBN/GaN HEMTs can thus
extend performance beyond the capabilities of current GaN transistors.
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