Kavli Affiliate: Darrell G. Schlom
| First 5 Authors: Prosper Ngabonziza, Jisung Park, Wilfried Sigle, Peter A. van Aken, Jochen Mannhart
| Summary:
We report a synthetic route to achieve high electron mobility at room
temperature in epitaxial La:BaSnO$_3$/SrZrO$_3$ heterostructures prepared on
several oxide substrates. Room-temperature mobilities of 157, 145, and 143
cm$^2$V$^{-1}$s$^{-1}$ are achieved for heterostructures grown on DyScO$_3$
(110), MgO (001), and TbScO$_3$ (110) crystalline substrates, respectively.
This is realized by first employing pulsed laser deposition to grow at very
high temperature the SrZrO$_3$ buffer layer to reduce dislocation density in
the active layer, then followed by the epitaxial growth of an overlaying
La:BaSnO$_3$ active layer by molecular-beam epitaxy. Structural properties of
these heterostructures are investigated, and the extracted upper limit of
threading dislocations is well below $1.0times 10^{10}$cm$^{-2}$ for buffered
films on DyScO$_3$, MgO, and TbScO$_3$ substrates. The present results provide
a promising route towards achieving high mobility in buffered La:BaSnO$_3$
films prepared on most, if not all, oxide substrates with large compressive or
tensile lattice mismatches to the film.
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