Kavli Affiliate: David Muller
| Summary:
Development of novel devices often involve combining functional materials and substrates, each chosen for particular physical properties such as low-loss or thermal conductivity. This, however, can introduce a large lattice mismatch and high density of structural defects that may limit device performance and reliability by trapping charge or creating leakage pathways. Such is the case for integrating superconducting TiN with a low-loss sapphire substrate. Here we resolve and image the resulting misfit, screw, and threading dislocations in epitaxial TiN on sapphire using the depth-sectioning capabilities of multislice electron ptychography. We find misfit dislocations spaced ~1.6 nm apart and track out-of-plane crossings of misfit dislocations as well as their transitions to threading dislocations, details which are obscured in conventional defect-imaging methods. The ability to correlate specific dislocation types and their interactions in extremely small volumes and at high densities is valuable for understanding structure-property relations even in modern, scaled devices.
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