Kavli Affiliate: Ke Wang
| First 5 Authors: Aleksandar Radic, Aleksandar Radic, , ,
| Summary:
Two-dimensional (2D) materials have attracted wide-spread interest due to
their unique and tunable properties. Their optoelectronic, mechanical, and
thermal properties are greatly influenced by crystal defects, which are, in
turn, used to control these properties. However, experimental quantification of
the density of defects, whether deliberately introduced or inherent, is very
difficult in these atomically thin materials. Here we show that helium atom
micro-diffraction can be used to measure the defect density in 15x20um
monolayer MoS2, a prototypical 2D semiconductor, quickly and easily compared to
standard methods. We present a simple analytic model, the lattice gas equation,
that fully captures the relationship between atomic Bragg diffraction intensity
and defect density. The model, combined with ab initio scattering calculations,
shows that our technique can immediately be applied to a wide range of 2D
materials, independent of sample chemistry or structure. Additionally,
wafer-scale characterization is immediately possible.
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