Dielectric catastrophe at the Mott and Wigner transitions in a moiré superlattice

Kavli Affiliate: Jie Shan | First 5 Authors: Yanhao Tang, Jie Gu, Song Liu, Kenji Watanabe, Takashi Taniguchi | Summary: The metal-insulator transition (MIT) driven by electronic correlations is a fundamental and challenging problem in condensed-matter physics. Particularly, whether such a transition can be continuous remains open. The emergence of semiconducting moir’e materials with continuously […]


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Van der Waals pi Josephson junctions

Kavli Affiliate: Jie Shan | First 5 Authors: Kaifei Kang, Helmuth Berger, Kenji Watanabe, Takashi Taniguchi, Laszlo Forro | Summary: Proximity-induced superconductivity in a ferromagnet can induce Cooper pairs with a finite center-of-mass momentum. The resultant spatially modulated superconducting order parameter is able to stabilize Josephson junctions (JJs) with pi phase difference in superconductor-ferromagnet heterostructures […]


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Reconstructing the polar interface of infinite-layer nickelate thin films

Kavli Affiliate: Lena F. Kourkoutis | First 5 Authors: Berit H. Goodge, Benjamin Geisler, Kyuho Lee, Motoki Osada, Bai Yang Wang | Summary: Nickel-based superconductors provide a long-awaited experimental platform to explore possible cuprate-like superconductivity. Despite similar crystal structure and $d$ electron filling, these systems exhibit several differences. Nickelates are the most polar layered oxide […]


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Programming Interactions in Magnetic Handshake Materials

Kavli Affiliate: Paul McEuen | First 5 Authors: Chrisy Xiyu Du, Hanyu Alice Zhang, Tanner Pearson, Jakin Ng, Paul McEuen | Summary: The ability to rapidly manufacture building blocks with specific binding interactions is a key aspect of programmable assembly. Recent developments in DNA nanotechnology and colloidal particle synthesis have significantly advanced our ability to […]


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Roadmap on Wavefront Shaping and deep imaging in complex media

Kavli Affiliate: Chris Xu | First 5 Authors: Sylvain Gigan, Ori Katz, Hilton B. de Aguiar, Esben Ravn Andresen, Alexandre Aubry | Summary: The last decade has seen the development of a wide set of tools, such as wavefront shaping, computational or fundamental methods, that allow to understand and control light propagation in a complex […]


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Optical Stabilization of Fluctuating High Temperature Ferromagnetism in YTiO$_3$

Kavli Affiliate: Ankit Disa | Summary:In quantum materials, degeneracies and frustrated interactions can have a profound impact on the emergence of long-range order, often driving strong fluctuations that suppress functionally relevant electronic or magnetic phases. Engineering the atomic structure in the bulk or at heterointerfaces has been an important research strategy to lift these degeneracies, […]


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Very-High Dynamic Range, 10,000 frames/second Pixel Array Detector for Electron Microscopy

Kavli Affiliate: Sol M. Gruner | First 5 Authors: Hugh T. Philipp, Mark W. Tate, Katherine S. Shanks, Luigi Mele, Maurice Peemen | Summary: Precision and accuracy of quantitative scanning transmission electron microscopy (STEM) methods such as ptychography, and the mapping of electric, magnetic and strain fields depend on the dose. Reasonable acquisition time requires […]


Continue.. Very-High Dynamic Range, 10,000 frames/second Pixel Array Detector for Electron Microscopy

Very-High Dynamic Range, 10,000 frames/second Pixel Array Detector for Electron Microscopy

Kavli Affiliate: Sol M. Gruner | Summary:Precision and accuracy of quantitative scanning transmission electron microscopy (STEM) methods such as ptychography, and the mapping of electric, magnetic and strain fields depend on the dose. Reasonable acquisition time requires high beam current and the ability to quantitatively detect both large and minute changes in signal. A new […]


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Epitaxial Sc$_x$Al$_{1-x}$N on GaN is a High K Dielectric

Kavli Affiliate: Grace Xing | First 5 Authors: Joseph Casamento, Hyunjea Lee, Takuya Maeda, Ved Gund, Kazuki Nomoto | Summary: Epitaxial Sc$_x$Al$_{1-x}$N thin films of ~100 nm thickness grown on metal polar GaN exhibit significantly enhanced relative dielectric permittivity ($epsilon_r$) values relative to AlN. $epsilon_r$ values of ~17 to 21 for Sc contents of 17 […]


Continue.. Epitaxial Sc$_x$Al$_{1-x}$N on GaN is a High K Dielectric