Kavli Affiliate: Farhan Rana
| First 5 Authors: Jimy Encomendero, Vladimir Protasenko, Farhan Rana, Debdeep Jena, Huili Grace Xing
| Summary:
The recent demonstration of resonant tunneling transport in nitride
semiconductors has led to an invigorated effort to harness this quantum
transport regime for practical applications. In polar semiconductors, however,
the interplay between fixed polarization charges and mobile free carriers leads
to asymmetric transport characteristics. Here, we investigate the possibility
of using degenerately doped contact layers to screen the built-in polarization
fields and recover symmetric resonant injection. Thanks to a high doping
density, negative differential conductance is observed under both bias
polarities of GaN/AlN resonant tunneling diodes (RTDs). Moreover, our
analytical model reveals a lower bound for the minimum resonant-tunneling
voltage achieved via uniform doping, owing to the dopant solubility limit.
Charge storage dynamics is also studied by impedance measurements, showing that
at close-to-equilibrium conditions, polar RTDs behave effectively as
parallel-plate capacitors. These mechanisms are completely reproduced by our
analytical model, providing a theoretical framework useful in the design and
analysis of polar resonant-tunneling devices.
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