Kavli Affiliate: Kerry J. Vahala
| First 5 Authors: Mingxiao Li, Lin Chang, Lue Wu, Jeremy Staffa, Jingwei Ling
| Summary:
The development of integrated semiconductor lasers has miniaturized
traditional bulky laser systems, enabling a wide range of photonic
applications. A progression from pure III-V based lasers to III-V/external
cavity structures has harnessed low-loss waveguides in different material
systems, leading to significant improvements in laser coherence and stability.
Despite these successes, however, key functions remain absent. In this work, we
address a critical missing function by integrating the Pockels effect into a
semiconductor laser. Using a hybrid integrated III-V/Lithium Niobate structure,
we demonstrate several essential capabilities that have not existed in previous
integrated lasers. These include a record-high frequency modulation speed of 2
exahertz/s (2.0$times$10$^{18}$ Hz/s) and fast switching at 50 MHz, both of
which are made possible by integration of the electro-optic effect. Moreover,
the device co-lases at infrared and visible frequencies via the second-harmonic
frequency conversion process, the first such integrated multi-color laser.
Combined with its narrow linewidth and wide tunability, this new type of
integrated laser holds promise for many applications including LiDAR, microwave
photonics, atomic physics, and AR/VR.
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