Kavli Affiliate: Noah Kurinsky
| First 5 Authors: Sinéad M. Griffin, Yonit Hochberg, Katherine Inzani, Noah Kurinsky, Tongyan Lin
| Summary:
We propose the use of silicon carbide (SiC) for direct detection of sub-GeV
dark matter. SiC has properties similar to both silicon and diamond, but has
two key advantages: (i) it is a polar semiconductor which allows sensitivity to
a broader range of dark matter candidates; and (ii) it exists in many stable
polymorphs with varying physical properties, and hence has tunable sensitivity
to various dark matter models. We show that SiC is an excellent target to
search for electron, nuclear and phonon excitations from scattering of dark
matter down to 10 keV in mass, as well as for absorption processes of dark
matter down to 10 meV in mass. Combined with its widespread use as an
alternative to silicon in other detector technologies and its availability
compared to diamond, our results demonstrate that SiC holds much promise as a
novel dark matter detector.
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